期刊
SOLID STATE COMMUNICATIONS
卷 117, 期 10, 页码 571-575出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(01)00010-2
关键词
interfaces; epitaxy; dislocations
Lattice-mismatched epitaxy produces a high concentration of dislocations (N-dis) in the interface region, and this region is often highly conductive, due to donor (N-D) decoration of the dislocations. Here we show that a simple postulate, N-D = alpha (N-dis/c), where c is the lattice constant and alpha a constant of order 1-2, predicts a nearly constant low-temperature mobility, independent of N-dis This prediction is experimentally verified in GaN grown on Al2O3, and is also applied to other mismatched systems. (C) 2001 Elsevier Science Ltd. All rights reserved.
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