The X-ray single crystal structure of [Me2In(acac)](2) and its use as a single-source precursor for the deposition of indium oxide thin films

Crystalline dimethyl(pentane-2,4-dionato)indium(III), [Me2In(acac)](2), has been prepared by the reaction of dimethylindium methoxide and pentane-2,4-dione in toluene. An X-ray structure determination shows that in the solid state, the complex is dimeric. [Me2In(acac)](2) has been used as a single-source precursor for the deposition cubic In2O3 thin films by low pressure metal-organic chemical vapour deposition (LP-MOCVD) at temperatures ranging from. 350 to 450 degreesC, on borosilicate glass, Si(100) and GaAs(111) substrates. All the as-deposited indium oxide films are single phase, cubic-In2O3.