期刊
SOLID STATE COMMUNICATIONS
卷 119, 期 12, 页码 641-645出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(01)00311-8
关键词
two-dimensional electron system; field-effect transistor; quantum Hall effect
We study the v = 5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n = 0-7.6 X 10(11) Cm-2 with a peak mobility mu = 5.5 X 10(6) cm(2) Vs(-1). The v = 5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields (B) as high as 12.6 T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at v = 5/2. (C) 2001 Elsevier Science Ltd. All rights reserved.
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