期刊
INTEGRATED FERROELECTRICS
卷 35, 期 1-4, 页码 151-158出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/10584580108016896
关键词
PMN-PT; MOCVD; impurity phases; piezoelectric properties
Epitaxial Pb(Mg1/3Nb2/3)O-3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O-3)-x(PbTiO3) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780 degreesC on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with P(r)approximate to 18 muC/cm(2) was obtained. Initial piezoresponse results are discussed.
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