Effect of interface states on negative capacitance characteristics in GaAs homojunction far-infrared detectors

Bias-, frequency- and temperature-defendent capacitance characteristics of p-GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared detectors are reported. A strong negative capacitance phenomenon has been observed. The origin of this effect is believed to be due to the carrier capture and emission at interface states, and has been confirmed by a comparison study of capacitance characteristics on p-GaAs HIWIP detectors with different intel face state densities. A fitting data based on charging-discharging current and the inertial conducting current model show good agreement with the experimental observations.