期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 65, 期 1-4, 页码 585-591出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0927-0248(00)00145-8
关键词
silicon nitride; surface passivation; PECVD; silicon; solar cells
The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 Omega cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised deposition parameters resulted in outstandingly low surface recombination velocities (SRVs) below 10 cm/s. Interestingly, we find the lowest SRVs for stoichiometric SiN films, as indicated by a refractive index of 1.9. In former studies similarly low SRVs had only been obtained for silicon-rich SiN films. The fundamentally different passivation behaviour of our SiN films is attributed to the addition of nitrogen to the process gases. (C) 2001 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据