Selective deposition of thin copper films onto silicon with improved adhesion

A novel copper deposition method has been developed to plate silicon surfaces. Continuous copper films are obtained galvanically on p- or n-type, single- or polycrystalline silicon. The films possess homogeneous structure, smooth surface, and improved adhesion to the substrate. The plating bath comprises an aqueous solution containing a copper compound, ascorbic acid, ammonium fluoride, and an antistress agent. With this process, the use of seed layers to improve adhesion between metal and semiconductor is avoided. (C) 2000 The Electrochemical Society. S1099-0062(00)07-069-3. All rights reserved.