Characterization of Mn-doped Sb(1.5)bi(0.5)Te(3) single crystals

Single crystals of (Sb0.75Bi0.25)(2-x)MnxTe3 and Sb1.5Bi0.5MnxTe3 (x = 0.0 - 0.05) were characterized by X-ray diffraction, measurements of reflectance in the plasma resonance frequency region, Hall coefficient, electrical conductivity, and Seebeck coefficient. It was found that Mn atoms in the crystal structure of Sb1.5Bi0.5Te3 behave like acceptors; the increase in the hole concentration is explained by the formation of substitutional defects of Mn'(Sb) and Mn'(Bi) in the crystal lattice of the studied crystals.