Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N-2/H-2 and N-2/NH3 plasmas

An organic film, FLARE(TM), is one of the most prospective candidates for interlayer insulating films with low dielectric constants (low k). This organic low k film was etched in inductively coupled high-density plasmas employing N-2/H-2 and N-2/NH3 gases. By changing the mixing ratio of these gases, the anisotropic etching profile was obtained. The etching plasmas were evaluated by quadruple mass spectroscopy and the vacuum ultraviolet absorption spectroscopy employing microplasma as a light source. N and H radical densities were estimated on the order of 10(11)-10(12) cm(-3) and 10(12)-10(13) cm(-3), respectively. The behavior of etch rate corresponded well to that of H radical density. H radicals were found to be important species for organic low k film etching, while N radicals could not etch without ion bombardments. On the other hand, N radicals were found to be effective for the formation of protection layer on the sidewall against the etching by the H radicals. The ratio of H and N radical densities would be important for the etching of organic low k film employing N-H plasmas. (C) 2002 American Institute of Physics.