Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons

Standard planar silicon detectors of 2 kOhm cm resistivity were irradiated with 7-10 MeV protons up to fluences of 7 x 10(13) p/cm(2). The effects of proton irradiation on the effective doping concentration (N-eff) and leakage current (I-vol) as a function of fluence were investigated. The evolution of N-eff and I-vol as a function of time after irradiation was obtained by heating the detectors to accelerate their ageing. Comparison is done with detectors of the same type irradiated with 24 GeV/c protons. The hardness factors for 7-10 MeV protons are extracted. (C) 2002 Elsevier Science B.V. All rights reserved.