Variable-temperature electrical measurements of zinc oxide/tin oxide-cosubstituted indium oxide

The electrical conductivity, Hall effect, and thermoelectric coefficient of Zn/Sn-cosubstituted In2O3 (In2-2xSnxZnxO3-delta), undoped In2O3, and indium-tin oxide (ITO) were studied vs cation composition, state of reduction, and measurement temperature (over the range of 4.2-340 K). Carrier contents and mobilities were determined from the Hall coefficient and conductivity in each case. In2-2xSnxZnxO3-delta displays conductivities up to 1 order of magnitude lower than ITO, and the conductivity of the material decreases with increasing cosubstitution, from approximately 860 to 235 S/cm. Reduction of the materials under flowing H-2/N-2 increases their carrier concentrations and therefore their conductivities. These results are discussed in terms of possible defect and transport models.