期刊
SOLID STATE COMMUNICATIONS
卷 122, 期 3-4, 页码 223-228出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(02)00084-4
关键词
semiconductors; impurities in semiconductors; electronic states (localized); light absorption and reflection
Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive Method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s(3/2)(Gamma(8)(+)) ground state to the 2p(5/2)(Gamma(8)(-)) and 2P(5/2)(F-7(-)) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. (C) 2002 Elsevier Science Ltd. All rights reserved.
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