Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure

A transparent homojunction was fabricated with a successive deposition of p- and n-type electronic conductive CuInO2 delafossite-type oxide films by a pulsed laser deposition technique. Each conductivity was realized by doping of Sn4+ ions as donor or Ca2+ ions as acceptor ions. The diode, composed of the p-n homojunction sandwiched by ITO films as anode and cathode, exhibits rectifying characteristics with a turn-on voltage of similar to1.8 V, keeping an optical transmission of 60%-80% in the visible region (its total thickness: 1.8 mum). (C) 2001 Elsevier Science Ltd. All rights reserved.