期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 49, 期 3, 页码 507-513出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.987123
关键词
CMOSFETs; dielectric breakdown; equivalent circuits; simulation
Dissimilar post-hard-breakdown nMOSFET characteristics are consistently explained by the location of a constant-size breakdown path. Device simulations with the breakdown path modeled as a narrow inclusion of highly doped n-type silicon well reproduce all postbreakdown nFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. An equivalent circuit describing the gate current in an nFET after hard gate-oxide breakdown is proposed.
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