On the mechanisms of current transfer in n-In2Se3-p-GaSe heterostructures

The current-voltage and capacitance-voltage characteristics of originally fabricated photosensitive, radiation-stable anisotype n-In2Se3-p-GaSe heterostructures are presented. The electrical properties of these heterostructures depend on the method of fabrication, which is explained by variation of the band parameters of indium selenide. (C) 2002 MAIK Nauka/Interperiodica.