Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

Schottky rectifiers with implanted p(+) guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices. The specific on-state resistance was in the range 1.7-30 Omega(.)cm(2), while the turn-on voltage was similar to1.8 V. The switching performance was analyzed using the reverse recovery current transient waveform, producing an approximate high-injection, level hole lifetime of similar to15 ns. The bulk GaN rectifiers show significant improvement in forward current density and on-state resistance over previous heteroepitaxial devices.