期刊
SOLID-STATE ELECTRONICS
卷 46, 期 3, 页码 373-378出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1101(01)00111-3
关键词
SOI; MOSFET; DIBL; full depletion; short-channel effects; fringing field
Lateral field penetration in the buried oxide (BOX) and underlying substrate of fully depleted SOI MOSFETs is responsible for a dramatic increase of short-channel effects. An original compact model of the latter phenomena is proposed and used to explore optimized architectures of sub-100 nm transistors. Various architectures including the ground-plane MOSFET, are compared using a quasi-2D analysis in order to evaluate the contribution of the BOX to short-channel effects. (C) 2002 Elsevier Science Ltd. All rights reserved.
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