期刊
DIAMOND AND RELATED MATERIALS
卷 11, 期 3-6, 页码 1268-1271出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0925-9635(02)00008-0
关键词
carbide; nitrides; SOI; modeling
The Psi-MOSFET is a device used in SOI electrical characterization. The aim of this paper was to establish a comparison between these transistors made in four variants: (1) with silicon film on buried oxide; (2) with silicon carbide film on buried oxide; (3) with silicon film on buried nitride; and (4) with silicon carbide film on buried nitride. ATLAS software simulated these structures. Besides this virtual experiment, a more complex model for the flat-band voltage is provided. (C) 2002 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据