From Psi-MOSFET with silicon on oxide to Psi-MOSFET with silicon carbide on nitride

The Psi-MOSFET is a device used in SOI electrical characterization. The aim of this paper was to establish a comparison between these transistors made in four variants: (1) with silicon film on buried oxide; (2) with silicon carbide film on buried oxide; (3) with silicon film on buried nitride; and (4) with silicon carbide film on buried nitride. ATLAS software simulated these structures. Besides this virtual experiment, a more complex model for the flat-band voltage is provided. (C) 2002 Elsevier Science B.V. All rights reserved.