期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 17, 期 1, 页码 35-38出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/17/1/306
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Bulk and surface processes determine the recombination rate in crystalline silicon wafers. In this paper we report effective lifetime measurements for a variety of commercially available float-zone silicon wafers that have been carefully passivated using alnealed silicon oxide. Different substrate resistivities have been explored, including both p-type (boron) and n-type (phosphorus) dopants. Record high effective lifetimes of 29 and 32 ms have been measured for 90 Omega cm n-type and 150 Omega cm p-type silicon wafers, respectively. The dependence of the effective lifetime has been measured for excess carrier densities in the range of 10(12)-10(17) cm(-3) These results demonstrate that very low bulk and surface recombination rates can be maintained during high-temperature oxidation (1050 degreesC) by carefully optimizing the processing conditions.
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