期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 8, 期 2, 页码 321-332出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/2944.999187
关键词
AlGaInP; light-emitting diodes; light extraction
This paper reviews the recent progress of AlGaInP high brightness light-emitting diodes. After the discussion of some basic material properties and the general problem of light extraction we will discuss several approaches of high efficiency devices.
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