期刊
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
卷 133, 期 1-3, 页码 55-63出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.elspec.2003.08.003
关键词
F; F+ centres; cathodoluminescence (CL); alpha-Al2O3; defects
类别
alpha-Al2O3(0 0 0 1) single crystals have been investigated using cathodoluminescence (CL) technique and Auger electron spectroscopy (AES). The main luminescent centres such as F, F+ or Cr3+ activated during the irradiation of crystals by electrons of 4 keV energy were detected and discussed. CL intensity is shown to be highly dependent on both synthesis conditions and thermal annealing treatments. The air-annealing treatments at high temperature (1700degreesC reduce considerably the concentration of defects inducing a constant evolution of CL-signal of the band located at 330 nm attributed to F+ defects. On the contrary, crystals not annealed enough display a large increase of the F+ CL-signal during the electron irradiation. The F+ emission is also observed to be very sensitive to electron dose. (C) 2003 Elsevier B.V. All rights reserved.
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