4.6 Article

Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs

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PHYSICAL REVIEW B
卷 68, 期 24, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.68.241308

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The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e(2)/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

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