Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

The electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure is studied by measuring the angle dependence of magnetotransport properties. The gate voltage dependence of the g factor is obtained from the coincidence method. The g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and close to the bare g-factor value of In0.53Ga0.47As. A large change in the g factor is observed by applying the gate voltage. The gate voltage dependence is not simply explained by the energy dependence of the g factor. (C) 2003 American Institute of Physics.