期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 15, 期 1, 页码 120-122出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2002.805762
关键词
external cavity; grating; microelectromechanical systems; semiconductor laser
An external cavity laser based on a stripe waveguide semiconductor optical amplifier, a ball lens, and a blazed diffraction grating fabricated by vertical deep reactive ion etching of silicon is demonstrated. Bandpass characteristics for a 12th-order grating are given. Timing of an external cavity laser over a 120-nm spectral range is demonstrated, with a maximum single-mode fiber-coupled power of 1 mW and side-mode suppression ratio of 30 dB.
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