期刊
MATERIALS TRANSACTIONS
卷 44, 期 11, 页码 2369-2374出版社
JAPAN INST METALS
DOI: 10.2320/matertrans.44.2369
关键词
molten germanium; molten silicon; laser flash method; sample cell; thermal diffusivity; thermal conductivity; high temperature
Thermal diffusivity values of molten germanium and silicon were measured by a laser flash method. Simple but useful sample cell systems were developed to keep the molten germanium and silicon shape uniform for a given thickness. In the present experimental condition, it is necessary to consider the effect of not only the radiative heat loss but also the conductive heat loss at the interface between the molten sample and the cell material under the present experimental conditions. However, the computer simulation results suggest that the conductive heat loss is found to be negligibly small. The thermal diffusivity values of molten germanium and silicon are given in the following equations (unit: m(2)/s). alpha(Ge) = 1.40 x 10(-8) (T - 1218) + 2.29 x 10(-5) 1218 less than or equal to T less than or equal to 1398 (unit: K) alpha(Si) = 4.48 x 10(-9) (T - 1685) + 2.23 x 10(-5) 1685 less than or equal to T less than or equal to 1705 (unit: K).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据