期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 50, 期 6, 页码 1998-2002出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2003.821610
关键词
GaN; LED; neutron irradiation; radiation effect
The neutron irradiation effects in GaN-based double heterojunction (DH) light-emitting diodes (LEDs) are investigated. Both optical and electrical properties showed significant degradation after,neutron irradiation. The basic mechanisms responsible for both electrical and optical degradation are discussed. Some optical and electrical recovery due to an injection-enhanced annealing effect is observed in our irradiated LEDs.
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