Organic field-effect transistors using perylene

Organic thin-film field-effect transistors using organic semiconductor, perylene are fabricated, and electrical measurements are performed. The field-effect mobility of the device using perylene shows only p-type behavior while the electron and hole mobilities of its single crystal form are 5.5 and 0.5 cm(2)/V s, respectively. Stacked layers of perlyene (a layer fabricated with low deposition rate followed by another layer with high deposition rate) are formed for the active layer. Furthermore hexadecafluorocopperphthalocyanine (F16CuPc) and pentacene buffer layers are also used to modify the interface. For all of these devices, perylene layers acts as p-type. Electron trapping at grain boundaries and interface is thought to be a crucial factor. Hole mobility of 3.9 x 10(-14) cm(2)/V s is obtained for the perylene film field-effect transistor device. (C) 2002 Elsevier Science B.V. All rights reserved.