期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 50, 期 1, 页码 136-143出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2002.806958
关键词
active pixel sensor (APS); CMOS sensor; digital pixel sensor (DPS); high-speed imaging; shutter
A high-responsivity 9-V/Lux-s high-speed 5000-frames/s (at full 512 x 512 resolution) CMOS active pixel sensor (APS) is presented in this paper. The sensor was designed for a 0.35-mum 2P3M CMOS sensor process and utilizes a five-transistor pixel to provide a true parallel shutter. Column-parallel analog-to-digital converter (ADC) architecture yields fast readout from pixels and digitization of the data simultaneously with. acquiring a new frame. The chip has a two-row SRAM to store data from the ADC and read previous rows of data out of the chip. There are a total of 16 parallel ports operating up to 90 MHz delivering similar to1.3 Gpixel/s or 13 Gb/s of data at the maximum rate. In conclusion, a comparison between two high-speed digital CMOS sensor architectures, which are a column-parallel APS and a digital pixel sensor (DPS), is conducted.
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