期刊
SOLID STATE COMMUNICATIONS
卷 125, 期 1, 页码 55-57出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(02)00621-X
关键词
thin films; magnetic films and multilayers; semiconductors; electronic transport; luminescence
GaMnN films with 1-3% Mn deposited on Si(100) and Al2O3(0001) substrates, by the technique of nebulized spray pyrolysis by employing acetylacetonate precursors, have been characterized by X-ray diffraction, photoluminescence spectra and other techniques. The films are ferromagnetic and show magnetic hysteresis. The ferromagnetic T-C increases with the Mn content, with the 3% Mn film showing a T-C of similar to250 K. Anomalous Hall effect is observed below T-C where the films exhibit a small negative magnetoresistance. (C) 2002 Elsevier Science Ltd. All rights reserved.
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