Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN

We demonstrated a UV-light-emitting diode on low-dislocation-density AlGaN. To improve the performance of the UV-LED, we modified the Ti/Au pad form of the UV-LED. The output power of the new LED is approximately 25% higher than that of the conventional LED. Moreover, the decrease in operating voltage is attributed to the spread injection current. This new UV-light-emitting diode shows a peak wavelength of 363 nm and an output power of 4.7 mW at 100 mA DC current injection.