期刊
ANALYTICAL SCIENCES
卷 19, 期 11, 页码 1557-1559出版社
JAPAN SOC ANALYTICAL CHEMISTRY
DOI: 10.2116/analsci.19.1557
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The effectiveness of cleaning organic contaminants from silicon dioxide (SiO2) surfaces was studied by conducting highly sensitive measurements using Fourier Transform Infrared Attenuated Total reflectance (FTIR-ATR) with a Si prism as the waveguide. To serve as an example, the surface of the prism was oxidized to an order of a few nanometers. The oxidized Si surface film was allowed to stand in the atmosphere and then wet-cleaned in a repeated manner; subsequently its thickness was measured by ellipsometry. Although, various wet-cleaning methods were tested, they only showed values of 0.1-0.2 nm larger than, but not equal to, the original thickness immediately after oxidation. FTIR-ATR measurements of the spectral change after exposure to air revealed that organic species, such as C-CH3 and -(CH2)(n)-, increased with time. Wet-cleaning the sample failed to remove the C-CH3 species, which indicates that they corresponded to the film thickness increment from the original.
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