3.8 Article

Accumulation and depletion layer thicknesses in organic field effect transistors

期刊

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 42, 期 12A, 页码 L1408-L1410

出版社

INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L1408

关键词

field effect transistor; accumulation layer; depletion layer; organic film

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We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (V-G = - 15 V) and 5 nm (V-G = 15 V), respectively.

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