期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 42, 期 12A, 页码 L1408-L1410出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L1408
关键词
field effect transistor; accumulation layer; depletion layer; organic film
We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (V-G = - 15 V) and 5 nm (V-G = 15 V), respectively.
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