A low-voltage low-power voltage reference based on subthreshold MOSFETs

In this brief, a new low-voltage low-power CMOS voltage reference independent of temperature is presented. It is based on subthreshold, MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a subthreshold MOSFET. The circuit, designed with a standard 1.2-mum CMOS technology, exhibits an average voltage of about 295 mV with an average temperature coefficient of 119 ppm/degreesC in the range [-25, +125] degreesC. A brief study of gate-source voltage behavior with respect to temperature in subthreshold. MOSFETs is also reported.