期刊
JETP LETTERS
卷 77, 期 3, 页码 135-139出版社
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/1.1567775
关键词
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Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1-1 mm) is studied in the temperature range 2.3-300 K. At zero magnetic field, the electric conduction G and the current-voltage characteristics of such wires obey the power laws G proportional to T-alpha, I proportional to V-beta, expected for one-dimensional electron systems. The effect of the magnetic field corresponds to a 20% growth of the exponents alpha, beta at H = 10 T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance. (C) 2003 MAIK Nauka/Interperiodica.
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