期刊
PROCEEDINGS OF THE IEEE
卷 91, 期 11, 页码 1765-1771出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2003.818323
关键词
future dynamic RAM (DRAM); future memory; memory paradigm; multilevel cell (MLC) Flash; NAND Flash; nanotechnology memory; new memory growth model; 90-nm memory
As we enter the nanotechnology era, a big shift in paradigm comes to the memory industry The traditional computer industry for dynamic RAM is expected to mature its memory-bit consumption with a relatively low growth rate. Meanwhile, the memory consumption and high-density memory usage in mobile handsets and digital consumer applications will grow very fast. For these new applications, NAND Flash memory will be the key enabling technology and its easy scaling and multibit/cell capabilities require a new memory growth model. The well-known Moore's law still. holds for most cases after the quarter-century history of the intergrated circuit industry. However, the paradigin shift in the memory industry requires a new memory growth model: a twofold increase per year in memory density This paper will cover some details of recent memory technologies, application trends, and the proposed new memory growth model.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据