期刊
INTEGRATED FERROELECTRICS
卷 53, 期 -, 页码 317-323出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/10584580390258246
关键词
SBT; 0.18 mu m embedded FeRAM; hydrogen damage free
An SBT-based embedded FeRAM has been successfully developed for the first time, which has been fabricated by using the 0.18 mum CMOS multi-level metal logic process. The highly-reliable FeRAM characteristics have been attained by the newly developed stacked cell structure which is fully enveloped by the top and bottom hydrogen barriers, resulting in the elimination of the hydrogen damage of the 0.18 mum multilevel metal process. The developed 0.18 mum SBT-based embedded FeRAM technology is most promising for commercialization of 0.18 mum embedded FeRAM and beyond.
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