期刊
SOLAR ENERGY
卷 77, 期 6, 页码 961-968出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.solener.2004.05.002
关键词
crystalline silicon on glass; epitaxial growth; silicon heterostructure
An alternative approach is described for the fabrication of a polycrystalline silicon thin-film solar cell on inexpensive substrates. In a first step amorphous silicon is recrystallized in an aluminum-induced crystallization process forming a large-grained polycrystalline silicon layer on glass or metal substrates. In a second step this layer is used as a template for epitaxial growth of the absorber layer (2-3 mum thick) at T < 600 degreesC using ion-assisted deposition techniques. The third step consists of the formation of an a-Si:H/c-Si heterojunction by depositing an a-Si:H emitter from the gas phase. It will be shown that each of these steps has been successfully developed and can now be implemented in a solar cell process. (C) 2004 Elsevier Ltd. All rights reserved.
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