期刊
SOLID STATE SCIENCES
卷 6, 期 1, 页码 101-107出版社
ELSEVIER
DOI: 10.1016/j.solidstatesciences.2003.10.010
关键词
TaON; Ta3N5; Ta2O5; synthesis; nitridation; thin film; pulsed laser deposition
TaON and Ta3N5 thin films of different thicknesses were prepared by pulsed laser deposition of tantalum oxide followed by ex situ thermal nitridation under ammonia. The nitridation was carried out in flowing gas in the 600-800 degreesC temperature range. The dependence of tantalum oxynitride and nitride crystalline phases formation on nitridation reaction parameters was investigated. Structural and microstructural characteristics were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). (C) 2003 Elsevier SAS. All rights reserved.
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