Quantitative high-resolution HAADF-STEM analysis of inversion boundaries in Sb(2)O(3)-doped zinc oxide

Sb(2)O(3)-doped ZnO crystals including inversion boundaries were investigated by high-resolution high-angle annular-dark field (HAADF) scanning transmission electron microscopy (STEM). The images were analysed with the aid of the image simulation based on Bethe method and also the retrieval processing using deconvolution. Utility of these two approaches for the HAADF-STEM analysis is discussed. (C) 2003 Elsevier B.V. All rights reserved.