期刊
SIAM JOURNAL ON APPLIED MATHEMATICS
卷 64, 期 5, 页码 1526-1549出版社
SIAM PUBLICATIONS
DOI: 10.1137/S003613990241730X
关键词
semiconductor supperlattices; drift-diffusion models
Charge transport in semiconductor superlattices can be described through a discrete drift-diffusion model. In this model, we identify some small parameter h > 0, related to the ratio between the length of a superlattice period and the observation length scale. Specifically, we investigate a regime where the length of the superlattice period is small while the doping pro. le is low. In the limit h --> 0, we are led to a nonlinear drift-diffusion model, coupled to the Poisson equation.
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