期刊
PHYSICAL REVIEW B
卷 69, 期 4, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.69.041202
关键词
-
We have studied the magnetic and transport properties of an ultralow-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of the spin susceptibility is consistent with that in Si-MOS structures. Temperature dependence of resistivity remains metallic even in strong magnetic fields where the spin degree of freedom is frozen out. We also found a magnetoresistance anisotropy with respect to an angle between the current and the in-plane magnetic field.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据