期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 78, 期 1, 页码 59-65出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-003-2235-0
关键词
-
In this work, laser-induced crystallization in MoOx thin films (1.8 less than or equal to x less than or equal to 2.1) is reported. This transformation involves a MoOx oxidation and subsequently a crystallization process from amorphous MoO3 to crystalline alpha-MoO3. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoOx to the thermodynamically stable alpha-MoO3 crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoOx to a mixture of alpha-MoO3 and the thermodynamically unstable beta-MoO3 crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据