期刊
SOLID STATE COMMUNICATIONS
卷 130, 期 5, 页码 313-316出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2004.02.013
关键词
SnO2; nanowires; conductivity; Efros-Shklovskii variable-range hopping
Stannic oxide (SOn(2)) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO2 nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation InR similar to T-1/2. On the I-V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears. (C) 2004 Elsevier Ltd. All rights reserved.
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