Electro-acoustic hysteresis behaviour of PZT thin film bulk acoustic resonators

Thin film bulk acoustic resonators (FBARs) based on Pb(ZrxTi(1-x))O-3 (PZT) with varying compositions, ranging from x=0.25 to 0.6, were fabricated to investigate hysteresis-like dependencies of the resonance frequency and electro-mechanical coupling constant on bias voltage. The resonators, formed by a simple sandwich structure consisting of bottom electrode, PZT thin film and top electrode, arranged on a planar acoustic mirror, were designed to give a resonance frequency of about 2 GHz. PZT thin films were deposited in a planar multi target sputtering system using three metallic targets in a reactive Ar/O-2 mixture. For low Zr-content, where PZT is grown in the tetragonal phase, the parallel resonance frequencies are strongly dependent on the applied electric field, while the series resonance frequency is practically unaffected. This behaviour is completely different for rhombohedral PZT at higher Zr-content. Here the series resonance frequency becomes strongly field dependent, which can be attributed to 109degrees/71degrees domain switching. As a potential application based on the observed strong field dependence of the acoustic properties, a bandwidth-tuneable or programmable RF filter based on PZT FBARs is proposed. (C) 2003 Elsevier Ltd. All rights reserved.