期刊
SOLID STATE COMMUNICATIONS
卷 129, 期 4, 页码 249-253出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2003.10.006
关键词
semiconductors; electronic transport; strain; high pressure
We investigated the influence of negative pressure on the electrical conductivity, the Seebeck coefficient, and the power factor of Sb2Te3. We performed first-principles calculations with the linearized-augmented plane-wave method considering negative hydrostatic pressure in the range from zero to -2 GPa and doping for electrons and holes up to 10(20) cm(-3). Our results predict a significant increase of the Seebeck coefficient and the power factor under negative pressure for certain doping concentrations. (C) 2003 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据