4.4 Article

Influence of negative pressure on thermoelectric properties of Sb2Te3

期刊

SOLID STATE COMMUNICATIONS
卷 129, 期 4, 页码 249-253

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2003.10.006

关键词

semiconductors; electronic transport; strain; high pressure

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We investigated the influence of negative pressure on the electrical conductivity, the Seebeck coefficient, and the power factor of Sb2Te3. We performed first-principles calculations with the linearized-augmented plane-wave method considering negative hydrostatic pressure in the range from zero to -2 GPa and doping for electrons and holes up to 10(20) cm(-3). Our results predict a significant increase of the Seebeck coefficient and the power factor under negative pressure for certain doping concentrations. (C) 2003 Elsevier Ltd. All rights reserved.

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