期刊
TECHNICAL PHYSICS LETTERS
卷 30, 期 9, 页码 795-798出版社
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/1.1804599
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We have studied the temperature dependence of the Hall effects in multilayer selectively doped InGaAs/GaAs heterostructures with quantum dots (QDs). It was found that structures possessing photoconductivity in the IR range exhibit a sharp (nearly exponential) growth of the conductivity and Hall mobility in the temperature interval from 8 to 30 K at a virtually constant Hall coefficient and electron density. A new mechanism of the lateral photoconductivity in the structures with QDs is proposed which is related to the change in the electron mobility in the two-dimensional channel as a result of a decrease in the Coulomb scattering on charged QDs. (C) 2004 MAIK Nauka / Interperiodica.
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