期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 7, 期 12, 页码 G338-G341出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.1819876
关键词
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Supercritical CO2 (SCCO2) was used to facilitate silylation in repairing oxygen plasma-induced damage during photoresist stripping in porous organosilicate films. Samples with open and closed-pore morphologies prepared by sacrificial-porogen approach were exposed to O-2 plasma to simulate damage. These samples were pretreated with 10% butanol in SCCO2 (wt/wt) and were silylated with 10% trimethylchlorosilane in SCCO2 (wt/wt). The results showed that this technique was effective in repairing plasma damage in films with open-pore morphology but was less effective in closed-pore films. However, the surface hydrophobicity for both films was recovered after treatment. (C) 2004 The Electrochemical Society.
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