期刊
INTEGRATED FERROELECTRICS
卷 64, 期 -, 页码 77-88出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/10584580490893655
关键词
-
We report on a novel non-volatile memory concept for resistive information storage, The particular device structure consists of a conductive ferroelectric/non-ferroelectric 2-layer sequence. Resistive switching is observed. by applying a voltage pulses. Our model predicts that the switching correlates with a change of the potential barrier height inside the structure. It may also explain resistive switching in systems consisting only of one ferroelectric layer and by assuming the presence. of nonferroelectric interface layers. The operation of the device is demonstrated for the PZT (48/52) system with a SrRuO3 bottom electrode and a Pt top electrode. The simulated and measured I-V curves are in good agreement.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据