期刊
INTEGRATED FERROELECTRICS
卷 75, 期 -, 页码 139-146出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/10584580500414226
关键词
PbZr0.3Ti0.7O3; LaMnO3; highly-oriented; piezoelectric force microscopy; retention
We have investigated structural and electrical properties of PbZr 0.3 Ti 0.7 O 3 (PZT) thin films deposited by pulsed laser deposition methods. PZT thin films have been deposited on LaMnO 3 (LMO) bottom electrodes with LaAlO 3 substrates during different deposition times. High-resolution x-ray diffraction data have shown that all the PZT films and bottom electrodes are highly oriented with their c-axes normal to the substrates. The thickness of each film is determined by field-emission scanning electron microscope. We have also observed root mean square roughness of 1 to 10 angstrom by using atomic force microscopy mode, and local polarization distribution and retention behavior of a ferroelectric domains by using piezoelectric force microscopy mode. A PZT/LMO structure has shown good ferroelectric and retention properties as a media for the nano-storage devices.
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