期刊
CARBON
卷 72, 期 -, 页码 312-320出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2014.02.011
关键词
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资金
- Deutsche Forschungsgemeinschaft [DFG ES 86/16-1]
- DAAD Project under PROBRAL [56269524]
- CAPES
- FAPESP
- CNPq
- CAPES-PNPD [1571/2008]
- ROBOCON
- INCT NAMITEC
- Graduate School of Natural Sciences Build-MoNa of the University of Leipzig
- ESF-NFG
- ESF Energie from the European Fonds for the state of Saxony
The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage (V-g) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in the carrier density (n) in the sample near surface region and under different values of V-g at room temperature. Transport measurements on different MLG samples reveal that under a large enough applied electric field these regions undergo a superconducting-like transition at T less than or similar to 17K. A magnetic field applied parallel or normal to the graphene layers suppresses the transition without changing appreciably the transition temperature. (C) 2014 Elsevier Ltd. All rights reserved.
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